Growth technology for ZnSe single crystals with low dislocation density [Articol]

dc.contributor.author	Colibaba, Gleb
dc.contributor.author	Nedeoglo, Dmitrii
dc.date.accessioned	2018-05-15T11:30:34Z
dc.date.available	2018-05-15T11:30:34Z
dc.date.issued	2008
dc.description.abstract	The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals free from subgrain boundaries and twins are suggested. The etch pits are not observed in the basic volume (up to 4 сm3) of grown crystals. It is shown, that PL spectra of as-grown ZnSe crystals consist of the edge radiation only. The resistivity of ZnSe crystals annealed in a Zn melt is higher than 108 Ohmcm, whereas the electrical conductivity of ZnSe:I crystals grown by chemical vapor transport and annealed in a Zn melt is 10 (Ohm⋅cm)-1 at room temperature.	en
dc.identifier.citation	COLIBABA, G., NEDEOGLO, D. Growth technology for ZnSe single crystals with low dislocation density. In: Moldavian Journal of the Physical Sciences. 2008, nr. 1, pp. 26-31. ISSN 1810-648X.	en
dc.identifier.issn	1810-648X
dc.identifier.uri	https://msuir.usm.md/handle/123456789/1748
dc.language.iso	en	en
dc.subject	crystals grown	en
dc.subject	semiconductor	en
dc.title	Growth technology for ZnSe single crystals with low dislocation density [Articol]	en
dc.type	Article	en

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