Effect of p-NiO interlayer on internal quantum efficiency of p-GaN/n-ZnO light-emitting devices [Articol]

dc.contributor.authorSirkeli, Vadim
dc.contributor.authorYilmazoglu, Oktay
dc.contributor.authorKüppers, Franko
dc.contributor.authorHartnagel, Hans
dc.date.accessioned2021-11-24T09:53:54Z
dc.date.available2021-11-24T09:53:54Z
dc.date.issued2015
dc.description.abstractWe report on numerical investigations of p-GaN/n-ZnO light-emitting devices with p-NiO interlayer, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The current–voltage dependences of investigated LEDs show a threshold voltage of 3.1 V and 5.4 V for the LED devices without and with presence of p-NiO interlayer, respectively. It is found that p-NiO layer act as electron blocking layer, that lead to the enhance of charge carriers confinement in active region, and to the increasing of internal quantum efficiency (IQE) of LED device up to 0.5%, that in four times higher in compare with that for original p-GaN/n-ZnO LED device.en
dc.identifier.citationSIRKELI, Vadim, YILMAZOGLU, Oktay et al. Effect of p-NiO Interlayer on Internal Quantum Efficiency of p-GaN/n-ZnO Light-Emitting Devices . In: Journal of Nanoelectronics and Optoelectronics. 2015, Vol. 9, Nr 6, pp. 811-818. ISSN 1555-130X.en
dc.identifier.issn1555-130X
dc.identifier.urihttps://www.ingentaconnect.com/contentone/asp/jno/2015/00000009/00000006/art00020
dc.identifier.urihttps://msuir.usm.md/handle/123456789/5033
dc.language.isoenen
dc.publisherAmerican Scientific Publishersen
dc.subjectgallium nitrideen
dc.subjectinternal quantum efficiencyen
dc.subjectlight-emitting diodeen
dc.subjectnickel oxideen
dc.subjectzinc oxideen
dc.titleEffect of p-NiO interlayer on internal quantum efficiency of p-GaN/n-ZnO light-emitting devices [Articol]en
dc.typeArticleen

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