The effect of Cu and annealing treatments on CdS/CdTe heterostructures studied with QE and photocurrent relaxation techniques [Articol]

dc.contributor.authorZhao, H.
dc.contributor.authorVatavu, Sergiu
dc.contributor.authorCaraman, Iu. M.
dc.contributor.authorGasin, P. A.
dc.contributor.authorMorel, D. L.
dc.contributor.authorFerekides, C. S.
dc.date.accessioned2021-02-24T09:56:12Z
dc.date.available2021-02-24T09:56:12Z
dc.date.issued2008
dc.description.abstractThe photo-emf (photocurrent) decay al light impulses excitation (in longitudinal configuration) has been used to determine the lifetime of the non-equilibrium charge carriers recombining in different regions of the CdS/CdTe Cu containing heterojunction at different temperatures and biases. The photosensitivity spectral distributions have been investigated for samples with different technological variations.en
dc.identifier.citationH. Zhao, S. A. Vatavu, I. M. Caraman, P. A. Gasin, D. L. Morel and C. S. Ferekides, "The effect of Cu and annealing treatments on CdS/CdTe heterostructures studied with QE and photocurrent relaxation techniques," 2008 33rd IEEE Photovoltaic Specialists Conference, San Diego, CA, USA, 2008, pp. 1-5, doi: 10.1109/PVSC.2008.4922556.en
dc.identifier.urihttps://ieeexplore.ieee.org/document/4922556
dc.identifier.urihttps://msuir.usm.md/handle/123456789/3847
dc.language.isoenen
dc.publisherIEEEen
dc.subjectheterojunctionsen
dc.subjectelectric vehiclesen
dc.titleThe effect of Cu and annealing treatments on CdS/CdTe heterostructures studied with QE and photocurrent relaxation techniques [Articol]en
dc.typeArticleen

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