OPTICAL AND PHOTOELECTRIC PROPERTIES OF NANOLAMELLAR STRUCTURES OBTAINED BY THERMAL ANNEALING OF INSE PLATES IN Zn VAPOURS

dc.contributor.authorUntila, Dumitru
dc.contributor.authorEvtodiev, Igor
dc.contributor.authorCaraman, Iuliana
dc.contributor.authorSpalatu, Nicolae
dc.contributor.authorDmitroglo, Liliana
dc.contributor.authorCaraman, Mihail
dc.date.accessioned2021-04-09T09:29:49Z
dc.date.available2021-04-09T09:29:49Z
dc.date.issued2018
dc.description.abstractThe structural, optical and photoelectric properties of InSe crystals grown by Bridgman–Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe‐InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS‐NIR spectral region.en
dc.identifier.citationUNTILA, Dumitru, EVTODIEV, Igor, CARAMAN, Iuliana et al. Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours. In: Physica Status Solidi (A). 2018, Vol. 215, Issue 4. ISSN 1862-6300.en
dc.identifier.issn1862-6300
dc.identifier.urihttp://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319
dc.identifier.urihttps://msuir.usm.md/handle/123456789/4103
dc.language.isoenen
dc.subjectsemiconductoren
dc.subjectnanostructuresen
dc.titleOPTICAL AND PHOTOELECTRIC PROPERTIES OF NANOLAMELLAR STRUCTURES OBTAINED BY THERMAL ANNEALING OF INSE PLATES IN Zn VAPOURSen
dc.typeArticleen

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
UNTILA.pdf
Size:
95.68 KB
Format:
Adobe Portable Document Format
Description:

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:

Collections