Structuri nanolamelare semiconductor GaSe:Cd – oxid propriu ca adsorbant selectiv de gaze [Articol]

Abstract

Din monocristale ε-GaSe crescute prin metoda Bridgman au fost obţinute lame cu grosimi de 10÷300 μm cu axa C6 orientată perpendicular pe suprafaţa (001). Prin tratament la temperatura de 450÷580°C suprafeţele lamelor au fost acoperite cu oxid propriu (Ga2O3) nanostructurat. Absorbţia moleculelor polare din atmosferă (H2O, CO, CON) s-a studiat prin metoda spectroscopiei IR absorbţionale. Au fost determinate benzile de absorbţie ale acestor molecule şi dependenţa transmitanţei optice în funcţie de concentraţia moleculelor adsorbite.

A lamella with the thickness of 10÷300 μm and C6 axis oriented perpendicular to (001) surface were obtained from ε-GaSe single crystals grown by Bridgeman method. By a heat treatment at the temperature of 450÷580°C the lamella surfaces were coated with the own nanostructured (Ga2O3) oxide. The absorption of polar molecules from the (H2O, CO, CON) atmosphere was studied by using absorptional IR spectroscopy. These molecules absorption bands and optical transparency dependence on the absorbed molecules concentration were determined.