HIGH TEMPERATURE ULTRA-FAST GALLIUM ARSENIDE RECTIFIER DEVICES

Abstract

The report is related to the high temperature electronics field. The industrial developed country practice demonstrates that up to 70% of the fabricated electrical energy passes through semiconductor converters. Only in the field of electrical drive, which uses about 50% from the produced electrical energy, passing to the frequency converter of the asynchronous drives speed control, brings an energy economy up to 25%. In the electrical transport with the energy braking recovering the economy is more than 30%. The present elaboration is foreseeing the improvement of the technological production route of gallium arsenide (GaAs) power semiconductor devices (PSD), by introducing some innovative technological processes as: (1) GaAs epitaxial technology in the Ga-AsCl 3-H2 system; (2) epitaxial structures divided into crystals by chemical method; (3) GaAs p-n junction passivation by own oxide (Ga2 O3) precipitate on the divided surface of the crystal. The goal of the project is increasing manufacturing efficiency (ME) at the GaAs power devices with more than 600 V of voltage fabrication. The proposed improvements are increasing ME with 40% and are expanding the blocking voltage interval up to 1000 V. As a result a new product was elaborated and proposed to the manufacturing– the ultra-fast current converter with 80 ns of recovery time, stable at high temperature (200 oC) and 4.5 kV of blocking voltage, that outrun the characteristics of commercial product ESJC30-05(0.3 s, 110 oC).