The investigation of TCO/CdS/CdTe heterojunctions by C-U and C-f measurements: Experiment and modeling [Articol]

dc.contributor.authorRotaru, Corneliu
dc.contributor.authorVatavu, Sergiu
dc.contributor.authorFedorov, Vladimir
dc.contributor.authorGașin, Petru
dc.contributor.authorLux-Steiner, Martha
dc.contributor.authorFerekides, Chris
dc.contributor.authorRusu, Marin
dc.date.accessioned2021-02-24T09:35:25Z
dc.date.available2021-02-24T09:35:25Z
dc.date.issued2013
dc.description.abstractThe paper presents the analysis of C-U and C-f data obtained in the 1 kHz-10 MHz range for CdS/CdTe heterojunctions prepared by CSS onto (ZnO:Al, ZnO:Al/i-ZnO)/Glass substrates. An attempt to model the physical properties of the heterojunctions is made. A small signal analysis has been carried out to establish the equivalent circuit of device. The unusual capacitance behavior of the ZnO based heterojunction is attributed to presence of the barrier at the back contact.en
dc.identifier.citationC. Rotaru et al., "The investigation of TCO/CdS/CdTe heterojunctions by C-U and C-f measurements: Experiment and modeling," 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), Tampa, FL, USA, 2013, pp. 2034-2038, doi: 10.1109/PVSC.2013.6744872.en
dc.identifier.urihttps://ieeexplore.ieee.org/document/6744872
dc.identifier.urihttps://msuir.usm.md/handle/123456789/3846
dc.language.isoenen
dc.publisherIEEEen
dc.subjectheterojunctionsen
dc.subjectphotovoltaic cellsen
dc.subjectNickelen
dc.subjectzinc oxideen
dc.subjectsemiconductor device modelingen
dc.titleThe investigation of TCO/CdS/CdTe heterojunctions by C-U and C-f measurements: Experiment and modeling [Articol]en
dc.typeArticleen

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
C.pdf
Size:
175.15 KB
Format:
Adobe Portable Document Format
Description:

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:

Collections