OPTICAL AND PHOTOELECTRIC PROPERTIES OF NANOLAMELLAR STRUCTURES OBTAINED BY THERMAL ANNEALING OF InSe PLATES IN Zn VAPOURS

dc.contributor.authorUntila, Dumitru
dc.contributor.authorEvtodiev, Igor
dc.contributor.authorCaraman, Iuliana
dc.contributor.authorSpalatu, Nicolae
dc.contributor.authorDmitroglo, Liliana
dc.contributor.authorCaraman, Mihail
dc.date.accessioned2019-03-01T14:26:13Z
dc.date.available2019-03-01T14:26:13Z
dc.date.issued2018
dc.description.abstractThe structural, optical and photoelectric properties of InSe crystals grown by Bridgman–Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe‐InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS‐NIR spectral region. [ABSTRACT FROM AUTHOR]en
dc.identifier.citationUNTILA, D., EVTODIEV, I., et al. Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours. In: Physica Status Solidi. A: Applications & Materials Science. 2/21/2018, Vol. 215 Issue 4, p1-1. ISSN 1862-6300.en
dc.identifier.issn1862-6300
dc.identifier.urihttps://msuir.usm.md/handle/123456789/1978
dc.language.isoenen
dc.publisherJohn Wiley & Sonsen
dc.subjectInSeen
dc.subjectoptical propertiesen
dc.subjectphotoelectric propertiesen
dc.subjectthermal annealingen
dc.subjectZn vapoursen
dc.titleOPTICAL AND PHOTOELECTRIC PROPERTIES OF NANOLAMELLAR STRUCTURES OBTAINED BY THERMAL ANNEALING OF InSe PLATES IN Zn VAPOURSen
dc.typeArticleen

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