Development of dissipative structures on surface of dielectric liquid in electrostatic field [Articol]

dc.contributor.authorConstntinov, Boris
dc.contributor.authorBocan, V.
dc.contributor.authorPasechnic, Teodosie
dc.contributor.authorUntila, Pantelei
dc.date.accessioned2018-07-06T09:10:39Z
dc.date.available2018-07-06T09:10:39Z
dc.date.issued2005
dc.description.abstractThe transition of plane surface of liquid dielectric charged with the electrical charge in the electrostatic field in the periodical gofer surface of crater type deformation is researched. It was proved for the first time that the apparition of dissipative structures keeps not optical character but thermal and is not conditioned by the presence of the photo sensible semiconductor layer. It was esta blished that the development of dissipative structures on the surface of dielectric liquid includes in itself the mechanism of initiation of germination deformations and a mechanism of multiplication of the centers of new deformations in the free volume of germination deformation.en
dc.identifier.citationCONSTANTINOV, B., BOCAN, V. et al. Development of dissipative structures on surface of dielectric liquid in electrostatic field. In: Moldavian Journal of the Physical Sciences. 2005, nr. 2, pp. 245-258. ISSN 1810-648X.en
dc.identifier.issn1810-648X
dc.identifier.urihttps://msuir.usm.md/handle/123456789/1762
dc.language.isoenen
dc.subjectelectrostatic fielden
dc.subjectsurface of liquid dielectricen
dc.titleDevelopment of dissipative structures on surface of dielectric liquid in electrostatic field [Articol]en
dc.typeArticleen

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