Development of dissipative structures on surface of dielectric liquid in electrostatic field [Articol]

dc.contributor.author	Constntinov, Boris
dc.contributor.author	Bocan, V.
dc.contributor.author	Pasechnic, Teodosie
dc.contributor.author	Untila, Pantelei
dc.date.accessioned	2018-07-06T09:10:39Z
dc.date.available	2018-07-06T09:10:39Z
dc.date.issued	2005
dc.description.abstract	The transition of plane surface of liquid dielectric charged with the electrical charge in the electrostatic field in the periodical gofer surface of crater type deformation is researched. It was proved for the first time that the apparition of dissipative structures keeps not optical character but thermal and is not conditioned by the presence of the photo sensible semiconductor layer. It was esta blished that the development of dissipative structures on the surface of dielectric liquid includes in itself the mechanism of initiation of germination deformations and a mechanism of multiplication of the centers of new deformations in the free volume of germination deformation.	en
dc.identifier.citation	CONSTANTINOV, B., BOCAN, V. et al. Development of dissipative structures on surface of dielectric liquid in electrostatic field. In: Moldavian Journal of the Physical Sciences. 2005, nr. 2, pp. 245-258. ISSN 1810-648X.	en
dc.identifier.issn	1810-648X
dc.identifier.uri	https://msuir.usm.md/handle/123456789/1762
dc.language.iso	en	en
dc.subject	electrostatic field	en
dc.subject	surface of liquid dielectric	en
dc.title	Development of dissipative structures on surface of dielectric liquid in electrostatic field [Articol]	en
dc.type	Article	en

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