HOT WALL BEAM EPITAXIAL GROWTH OF PbTe LAYERS ON BaFdCaFdSi(llI) SUBSTRATES

Abstract

PbTe(III) thin films were grown by the hot wall beam epitaxy (HWBE) technique on Si( III ) substrates using intermediate BaF2/CaF2 buffers grown by MBE. The best PbTe layers exhibit the high resolution X-ray rocking curve linewidth of about 130 arcsec,the low temperature Hall mobility of 8 x l d cm2Ns, and an excellent surface morphology with the roughness of a few angstrom as it was determined by the atomic force microscopy (AFM). The results indicate that high-quality PbTe films can be obtained on fluoride covered Si(III ) substrates by simple and cheap HWBE method.