Impurity distribution in n-ZnSe crystals doped with Au [Articol]

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dc.contributor.authorNedeoglo, Dmitrii
dc.contributor.authorNedeoglo, Natalia
dc.contributor.authorSirkeli, Vadim
dc.date.accessioned2018-04-11T13:07:23Z
dc.date.available2018-04-11T13:07:23Z
dc.date.issued2005
dc.description.abstractHall effect, electric conductivity and mobility of charge carriers in n-ZnSe single crystals doped with Au are investigated in the temperature range from 77 to 300 K. Impurity distribution in the crystals was studied by a method of “layer-by-layer” etching of a sample surface. The model, which explains this distribution by a simultaneous diffusion of Zn and Au atoms during a long-term high-temperature annealing of as-grown crystals in Zn + Au melt, is proposed.en
dc.identifier.citationNEDEOGLO, D.D., NEDEOGLO, N.D., SIRKELI, V.P. Impurity distribution in n-ZnSe crystals doped with Au. In: Moldavian Journal of the Physical Sciences. 2005, nr.4 , pp. 435-437. ISSN 1810-648X.en
dc.identifier.issn1810-648X
dc.identifier.urihttps://msuir.usm.md/handle/123456789/1738
dc.language.isoenen
dc.subjectcrystals dopeden
dc.titleImpurity distribution in n-ZnSe crystals doped with Au [Articol]en
dc.typeArticleen

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