RESONANT TUNNELING AND QUANTUM CASCADING FOR OPTIMUM ROOM-TEMPERATURE GENERATION OF THz SIGNALS
| dc.contributor.author | Sirkeli, Vadim | |
| dc.contributor.author | Yilmazoglu, Oktay | |
| dc.date.accessioned | 2021-11-22T09:49:35Z | |
| dc.date.available | 2021-11-22T09:49:35Z | |
| dc.date.issued | 2017 | |
| dc.description.abstract | We report on the results of a numerical study of quantum transport in ZnSe-based resonant-tunneling diodes (RTDs) and quantum cascade oscillators (QCOs) with fixed and unequal barrier heights. It is found that the negative differential resistance exists up to room temperature in the current-voltage characteristics of the RTD and QCO devices with unequal barrier heights. Further, we demonstrate that QCOs with unequal barrier heights have a better frequency and power performance characteristics compared with RTDs and are more beneficial for high-power terahertz generation at room temperature. For the best QCO device with 100 periods of quantum cascading, a maximum output power of ~7-9 μW for the operating frequency range from 0.1 to ~6 THz at room temperature was achieved. | en |
| dc.identifier.citation | SIRKELI, Vadim, YILMAZOGLU, Oktay et al. Resonant tunneling and quantum cascading for optimum room-temperature generation of THz signals. In: IEEE Transactions on Electron Devices. 2017, Vol.64, Issue 8, pp. 3482 - 3488. ISSN 0018-9383. | en |
| dc.identifier.issn | 0018-9383 | |
| dc.identifier.uri | https://msuir.usm.md/handle/123456789/5017 | |
| dc.identifier.uri | https://ieeexplore.ieee.org/abstract/document/7968341/keywords#keywords | |
| dc.language.iso | en | en |
| dc.publisher | Institute of Electrical and Electronics Engineers | en |
| dc.subject | semiconductor devices | en |
| dc.subject | quantum well devices | en |
| dc.subject | resonant tunneling devices | en |
| dc.subject | terahertz (THz) radiation | en |
| dc.title | RESONANT TUNNELING AND QUANTUM CASCADING FOR OPTIMUM ROOM-TEMPERATURE GENERATION OF THz SIGNALS | en |
| dc.type | Article | en |