Studiul proprietăţilor fotoelectrice ale HJ cu straturi subţiri ZnTe/CdTe [Articol]

Abstract

This paper presents the investigation of the curent-voltage and capacitance-voltage caracteristics of the ZnTe/CdTe heterojunctions (HJs) fabricated by close space sublimation method. The analysis of characteristics indicates to existence of a high resistive layer at the interface of ZnTe/CdTe. It is established that the forward current is dominated by the diffusion and generation-recombination processes at the low biases and by the driftdiffusion model at high biases. Capacitance–voltage measurements indicate the considerable numbers of deep recombination centers in the depletion region of the ZnTe/CdTe HJs.