Absorbtia luminii si fotoluminescenta cristalelor GaSe:Eu [Articol]

dc.contributor.authorUntila, Dumitru
dc.date.accessioned2021-07-07T10:50:45Z
dc.date.available2021-07-07T10:50:45Z
dc.date.issued2012
dc.description.abstractGaSe monocrystals doped with 0,025%, 0,068%, 0,49% at. Eu, optically transparent in wavelengths domain λ>650 nm, were grown by Bridgman method. In addition to structural defects in ...Se-Ga-Ga-Se... stratified package, introduction of the Eu impurities in GaSe leads to the formation of Eu3+ luminescence centers. On the elementary package surface of GaSe doped with 0,49% at. Eu, there are neutral Eu atoms, what by thermic treatment at 400÷450ºC are forming a Eu2O3 and Ga2O3 composite layer.en
dc.identifier.citationUNTILA, Dumitru. Absorbtia luminii si fotoluminescenta cristalelor gase:eu. In: Studia Universitatis Moldaviae. Seria Ştiinţe Exacte şi Economice: Matematică. Informatică. Fizică. Economie. Revistă științifică. 2012, nr. 2(52), pp. 70-75. ISSN 1857-2073.en
dc.identifier.issn1857-2073
dc.identifier.urihttp://studiamsu.eu/nr-2-52-2012/
dc.identifier.urihttps://msuir.usm.md/handle/123456789/4646
dc.language.isoroen
dc.publisherCEP USMen
dc.subjectmonoseleniura de galiuen
dc.subjectfotoluminescenţaen
dc.subjectabsorbția luminiien
dc.titleAbsorbtia luminii si fotoluminescenta cristalelor GaSe:Eu [Articol]en
dc.typeArticleen

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