Absorbtia luminii si fotoluminescenta cristalelor GaSe:Eu [Articol]
| dc.contributor.author | Untila, Dumitru | |
| dc.date.accessioned | 2021-07-07T10:50:45Z | |
| dc.date.available | 2021-07-07T10:50:45Z | |
| dc.date.issued | 2012 | |
| dc.description.abstract | GaSe monocrystals doped with 0,025%, 0,068%, 0,49% at. Eu, optically transparent in wavelengths domain λ>650 nm, were grown by Bridgman method. In addition to structural defects in ...Se-Ga-Ga-Se... stratified package, introduction of the Eu impurities in GaSe leads to the formation of Eu3+ luminescence centers. On the elementary package surface of GaSe doped with 0,49% at. Eu, there are neutral Eu atoms, what by thermic treatment at 400÷450ºC are forming a Eu2O3 and Ga2O3 composite layer. | en |
| dc.identifier.citation | UNTILA, Dumitru. Absorbtia luminii si fotoluminescenta cristalelor gase:eu. In: Studia Universitatis Moldaviae. Seria Ştiinţe Exacte şi Economice: Matematică. Informatică. Fizică. Economie. Revistă științifică. 2012, nr. 2(52), pp. 70-75. ISSN 1857-2073. | en |
| dc.identifier.issn | 1857-2073 | |
| dc.identifier.uri | http://studiamsu.eu/nr-2-52-2012/ | |
| dc.identifier.uri | https://msuir.usm.md/handle/123456789/4646 | |
| dc.language.iso | ro | en |
| dc.publisher | CEP USM | en |
| dc.subject | monoseleniura de galiu | en |
| dc.subject | fotoluminescenţa | en |
| dc.subject | absorbția luminii | en |
| dc.title | Absorbtia luminii si fotoluminescenta cristalelor GaSe:Eu [Articol] | en |
| dc.type | Article | en |