PHOTOELECTRICAL PROPERTIES OF LAYERED GaS SINGLE CRYSTALS AND RELATED STRUCTURES
| dc.contributor.author | Caraman, Mihail | |
| dc.contributor.author | Chiricenco, Valentina | |
| dc.contributor.author | Leontie, Liviu | |
| dc.contributor.author | Rusu, Ioan I. | |
| dc.date.accessioned | 2024-09-25T09:38:10Z | |
| dc.date.available | 2024-09-25T09:38:10Z | |
| dc.date.issued | 2008 | |
| dc.description | CARAMAN, Mihail; Valentina CHIRICENCO; Liviu LEONTIE și Ioan I. RUSU. Photoelectrical properties of layered GaS single crystals and related structures. Materials Research Bulletin. 2008, vol. 43, pp. 3195-3201. ISSN 0025-5408. | |
| dc.description.abstract | The photoconductivity of pure and Cu-doped layered gallium monosulfide (GaS) single crystals, and of Ni–GaS(Cu)–In and GaS(Cu)–ZnO structures, is investigated. The activation energies of surface states were found as 0.10 eV, 0.40 eV and 17 meV, 400 meV for GaS and GaS(Cu), respectively. Cu acceptor levels are localized at 0.44 eV and 0.52 eV above the valence band of GaS. ZnO–GaS(Cu) heterojunctions show remarkable photosensitivity in the wavelength range of 250–700 nm. | en |
| dc.identifier.citation | CARAMAN, Mihail; Valentina CHIRICENCO; Liviu LEONTIE și Ioan I. RUSU. Photoelectrical properties of layered GaS single crystals and related structures. Materials Research Bulletin. 2008, vol. 43, pp. 3195-3201. ISSN 0025-5408. | en |
| dc.identifier.issn | 0025-5408 | |
| dc.identifier.uri | https://msuir.usm.md/handle/123456789/16102 | |
| dc.identifier.uri | https://doi.org/10.1016/j.materresbull.2008.04.014 | |
| dc.language.iso | en | en |
| dc.subject | Layered compounds | en |
| dc.subject | Semiconductors | en |
| dc.subject | Crystal growth | en |
| dc.subject | Electrical properties | en |
| dc.title | PHOTOELECTRICAL PROPERTIES OF LAYERED GaS SINGLE CRYSTALS AND RELATED STRUCTURES | en |
| dc.type | Article | en |