OBŢINEREA STRATURILOR AlN PE Si PRIN METODA HVPE ŞI CERCETAREA PROPRIETĂŢILORLOR
| dc.contributor.author | Raevschi, Simion | |
| dc.contributor.author | Davydov, Valerii | |
| dc.contributor.author | Zhilyaev, Yurii | |
| dc.contributor.author | Gorceac, Leonid | |
| dc.contributor.author | Botnariuc, Vasile | |
| dc.date.accessioned | 2021-03-04T11:27:52Z | |
| dc.date.available | 2021-03-04T11:27:52Z | |
| dc.date.issued | 2008 | |
| dc.description.abstract | AlN layers on Si(111) were fabricated by Hydride Vapor Phase Eptaxy (HVPE). The obtained layers were studied by using Raman spectroscopy and by scanning electron microscope (SEM). The layers surface is structured. The Raman spectra of the layers, obtained at the temperatures of 800-1100oC, are presented. It was established that the layers are mechanically deformed in substrate plane and have a high value of the threshold voltage (are dielectrics). | en |
| dc.identifier.citation | RAEVSCHI, Simion, DAVÎDOV, Valerii, et. al. Obţinerea straturilor AIN pe Si prin metoda HVPE şi cercetarea proprietăţilor lor. In: Studia Universitatis Moldaviae Seria Ştiinţe Reale şi ale Naturii:Biologie. Chimie. Revista științifică. 2008, nr. 2(12). pp. 217-220. ISSN 1814-3237. | en |
| dc.identifier.issn | 1814-3237 | |
| dc.identifier.uri | http://studiamsu.eu/nr-2-12-2008/ | |
| dc.identifier.uri | https://msuir.usm.md/handle/123456789/3906 | |
| dc.language.iso | ro | en |
| dc.publisher | CEP USM | en |
| dc.subject | straturi AlN | en |
| dc.title | OBŢINEREA STRATURILOR AlN PE Si PRIN METODA HVPE ŞI CERCETAREA PROPRIETĂŢILORLOR | en |
| dc.type | Article | en |