PHOTOELECTRICAL PARAMETERS OF nCdS–pCdTe THIN-FILM SOLAR CELLS WITH A CdO BUFFER LAYER

Simple item page
dc.contributor.authorGașin, Petru
dc.contributor.authorGargara, Ludmila
dc.contributor.authorChetruș, Petru
dc.contributor.authorInculeț, Ion
dc.contributor.authorFiodorov, Vladimir
dc.contributor.authorQassem, Amjad-Al
dc.date.accessioned2024-10-04T09:03:52Z
dc.date.available2024-10-04T09:03:52Z
dc.date.issued2016
dc.description.abstractThe results of the studies of the effect of a CdO buffer layer on the photoelectrical parameters of CdS–CdTe solar cells have been described. It has been found that the formation of a 5–8 nm thick CdO buffer layer leads to an increase in the CdS–CdTe solar cell open circuit voltage (Voc) by 90–140 mV, short circuit current (Isc) by 1.4–3.2 mA/cm2, and efficiency by 2.8–4.1% at 300 K and an illumination of 100 mW/cm2. en
dc.identifier.citationGAȘIN, Petru; Ludmila GAGARA; Petru CHETRUȘ; Ion INCULEȚ; Vladimir FIODOROV și Amjad-Al QASSEM. Photoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer. Moldavian Journal of the Physical Sciences. 2016, nr. 1-2(15), pp. 54-59. ISSN 1810-648X.en
dc.identifier.issn1810-648X
dc.identifier.urihttps://msuir.usm.md/handle/123456789/16240
dc.language.isoenen
dc.titlePHOTOELECTRICAL PARAMETERS OF nCdS–pCdTe THIN-FILM SOLAR CELLS WITH A CdO BUFFER LAYERen
dc.typeArticleen

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
54_59_Photoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer.pdf
Size:
347.22 KB
Format:
Adobe Portable Document Format
Description:
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

2. Articole