Modeling of temperature regimes of thin film gas sensitive devices [Articol]

dc.contributor.authorDmitriev, Serghei
dc.date.accessioned2018-03-29T10:23:49Z
dc.date.available2018-03-29T10:23:49Z
dc.date.issued2005
dc.description.abstractThis paper presents results of the modeling of the temperature distribution in a chip of thin film gas sensor, operating at high temperatures (150-1000 oC), required to provide high sensitivity and selectivity to target gases. Analysis of thermal regimes of such chip was carried out on the base of model of plate with local source of heat. It was found that substrate heat conductivity is most influencing parameter, determining both temperature distribution in chip and also the electrical power consumption decreasing. The example of realized chips designed in accordance with results of modeling is presented. The results of modeling are compared with experimental data.en
dc.identifier.citationDMITRIEV, S. Modeling of temperature regimes of thin film gas sensitive devices. In: Moldavian Journal of the Physical Sciences. 2005, nr. 1, pp. 90-93. ISSN 1810-648X.en
dc.identifier.issn1810-648X
dc.identifier.urihttps://msuir.usm.md/handle/123456789/1731
dc.language.isoenen
dc.subjectthin filmen
dc.titleModeling of temperature regimes of thin film gas sensitive devices [Articol]en
dc.typeArticleen

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