ZnO/CdS/CuGaSe2 solar cells – absorber and device properties [Articol]

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dc.contributor.authorRusu, Marin
dc.date.accessioned2024-09-30T08:54:20Z
dc.date.available2024-09-30T08:54:20Z
dc.date.issued2006
dc.description.abstractFor solar cells based on CuGaSe 2 (CGSe) polycrystalline thin films, a novel chemical close-spaced vapor transport technique is used to deposit CGSe absorber. Film characterisa-close-spaced vapor transport technique is used to deposit CGSe absorber. X-ray fluorescence and elastic recoil detection analysis has been carried out. Optical measurements were performed to monitor the changes in the CGSe band gap as a function of com-rements were performed to monitor the changes in the CGSe band gap as a function of composition. These results are used for a discussion of the behaviour of the ZnO/CdS/CuGaSe2 solar cell photovoltaic parameters as well as of the current transport. For the first time, a thermally activated Shockley-Read-Hall recombination mechanism is observed for the CGSe-based solar cells in a large temperature region. en
dc.description.sponsorshipThe author thanks M.Ch Lux-Steiner, Th. Schedel-Niedrig and R. Klenk for discussions and all the colleagues who assisted this work. This work is supported by the German Ministry of Research BMWi (No. 0329740B).en
dc.identifier.citationRUSU, Marin. ZnO/CdS/CuGaSe2 solar cells – absorber and device properties. Moldavian Journal of the Physical Sciences. 2006, nr. 2(5), pp. 176-188. ISSN 1810-648X.en
dc.identifier.issn1810-648X
dc.identifier.urihttps://msuir.usm.md/handle/123456789/16187
dc.language.isoenen
dc.titleZnO/CdS/CuGaSe2 solar cells – absorber and device properties [Articol]en
dc.typeArticleen

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