Kinetics of photoconductivity and photoluminescence of CdS/CdTe heterojunctions [Articol]

dc.contributor.authorVatavu, Sergiu
dc.contributor.authorCaraman, Iuliana
dc.contributor.authorGashin, Peter A.
dc.date.accessioned2024-09-04T13:48:59Z
dc.date.available2024-09-04T13:48:59Z
dc.date.issued2005
dc.descriptionVATAVU, Sergiu; Iuliana CARAMAN și Peter A. GASHIN. Kinetics of photoconductivity and photoluminescence of CdS/CdTe heterojunctions. Moldavian Journal of the Physical Sciences. 2005, nr.4, pp. 473-480. ISSN 1810-648X.
dc.description.abstractThe photoluminescence and absoption spectral distribution close to the edge of fundamental band were studied in the CdS and CdTe films components of the CdS/CdTe heterojunctions. Recombination level energetic position was determined. The annealing of the CdS/CdTe heterojunctions in presence of CdCl2 results in formation of new recombination levels, revealed by a luminescent band in the energy range of 1.6-1.7 eV and by the shift of the impurity band maximum to the red wavelength region by 50 meV.en
dc.identifier.citationVATAVU, Sergiu; Iuliana CARAMAN și Peter A. GASHIN. Kinetics of photoconductivity and photoluminescence of CdS/CdTe heterojunctions. Moldavian Journal of the Physical Sciences. 2005, nr.4, pp. 473-480. ISSN 1810-648X.en
dc.identifier.issn1810-648X
dc.identifier.urihttps://msuir.usm.md/handle/123456789/15940
dc.language.isoenen
dc.titleKinetics of photoconductivity and photoluminescence of CdS/CdTe heterojunctions [Articol]en
dc.typeArticleen

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