Absorbția luminii și fotoluminescența cristalelor GaSe: Eu [Articol]

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2012

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CEP USM

Abstract

GaSe monocrystals doped with 0,025%, 0,068%, 0,49% at. Eu, optically transparent in wavelengths domain λ>650 nm, were grown by Bridgman method. In addition to structural defects in ...Se-Ga-Ga-Se... stratified package, introduction of the Eu impurities in GaSe leads to the formation of Eu3+ luminescence centers. On the elementary package surface of GaSe doped with 0,49% at. Eu, there are neutral Eu atoms, what by thermic treatment at 400÷450ºC are forming a Eu2O3 and Ga2O3 composite layer.

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monocristalele GaSe, metoda Bridgman, ioni Eu3+

Citation

UNTILA, Dumitru. Absorbtia luminii si fotoluminescenta cristalelor GaSe: Eu. In: Studia Universitatis Moldaviae. Seria Ştiinţe Exacte şi Economice: Matematică. Informatică. Fizică. Economie. Revistă științifică. 2012, nr. 2(52), pp. 70-75. ISSN 1857-2073.

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