PROPRIETĂŢILE ELECTRICE ALE CELULEI FOTOVOLTAICE CU JONCŢIUNE RELIEFATĂ FABRICATĂ PRIN HVPE
| dc.contributor.author | Baranov, Simion | |
| dc.contributor.author | Gorceac, Leonid | |
| dc.contributor.author | Cinic, Boris | |
| dc.date.accessioned | 2024-09-30T11:06:04Z | |
| dc.date.available | 2024-09-30T11:06:04Z | |
| dc.date.issued | 2014-10-22 | |
| dc.description.abstract | In this report we are represented the electro-physical properties of the photovoltaic cell with single relief junction fabricated on gallium arsenide substrate by HVPE method. This cell have the shunt resistance of 3.8 time bigger then the plane one, that it demonstrates the decrease of energy losses on the cell surface. It increases the efficiency of charges gathering (78 % of the full coefficient). It was used the AFM and RAMAN methods of investigation. | en |
| dc.identifier.citation | BARANOV, Simion; Leonid GORCEAC și Boris CINIC. Proprietăţile electrice ale celulei fotovoltaice cu joncţiune reliefată fabricată prin HVPE. In: Microelectronics and Computer Science: The 5th International Conference,ediția a 8-a, 22-25 octombrie 2014, Chisinau: Editura "Tehnica-UTM", 2014, pp. 24-27. | en |
| dc.identifier.isbn | 978-9975-45-329-5 | |
| dc.identifier.uri | https://msuir.usm.md/handle/123456789/16193 | |
| dc.language.iso | ro | en |
| dc.publisher | Editura "Tehnica-UTM" | en |
| dc.subject | gallium arsenide | en |
| dc.subject | hydride vapor phase epitaxy | en |
| dc.subject | single relief p-n junction | en |
| dc.title | PROPRIETĂŢILE ELECTRICE ALE CELULEI FOTOVOLTAICE CU JONCŢIUNE RELIEFATĂ FABRICATĂ PRIN HVPE | en |
| dc.type | Article | en |