Investigation of Cd1-xMnxTe crystals annealed in a Cd melt [Articol]

Abstract

Cd 1 - x Mn x Te crystals are among the most efficient, from the practical point of view, semimagnetic semiconductors, which could be used in optoelectronic and magneto - optic devices [1, 2]. However, their using is limited by such factors as high concentration of inh erited point - like defects and uncontrolled impurities, non - uniform distribution of the dissolved substance, presence of the inclusions of the second phase, mechanical stress, etc. The presence of these defects, first of all, is stipulated by the technologi cal conditions of material fabrication [3, 4]. To decrease the number of defects, the annealing in the vapor or melt of components is carried out. In the given paper, the results of the investigation of the galvano - magnetic properties of Cd 1 - x Mn x Te crystals annealed in a medium of cadmium are described.