EVOLUAREA PARTICULELOR DISPERSATE DE AlN DEPUSE PE Si PRIN METODA HVPE LA ETAPA DE FORMARE A STRATULUI CONTINUU
dc.contributor.author | Raevschi, Simion | |
dc.contributor.author | Kompan, Mihail | |
dc.contributor.author | Zhilyaev, Yurii | |
dc.contributor.author | Gorceac, Leonid | |
dc.contributor.author | Botnariuc, Vasile | |
dc.date.accessioned | 2021-06-14T09:23:40Z | |
dc.date.available | 2021-06-14T09:23:40Z | |
dc.date.issued | 2011 | |
dc.description.abstract | Evolution of growth of the disperse particles of AlN which has been grown up on substrates of silicon during formation of a continuous layer are studies by AFM (Atomic Force Microscopy ) method. Layers have been grown up by HVPE (Hydride Vapor Phase Epitaxy) method at 1100o C. It is established: a) nunucleation occurs according to three dimensional model; b) layers are formed of two categories of disperse particles; c) growth rate of categories differ; d) at an initial stage of growth there is a latent period of time when superficial concentration of disperse particles remains to a constant. | en |
dc.identifier.citation | RAEVSCHI, Simion; KOMPAN, Mihail, et.al. Evoluarea particulelor dispersate de ALN depuse pe si prin metoda HVPE la etapa de formare a stratului continuu. In: Studia Universitatis Moldaviae. Seria Ştiinţe Exacte şi Economice: Matematică. Informatică. Fizică. Economie. Revistă științifică. 2011, nr. 2(42), pp. 84-88. ISSN 1857-2073. | en |
dc.identifier.issn | 1857-2073 | |
dc.identifier.uri | http://studiamsu.eu/nr-2-42-2011/ | |
dc.identifier.uri | https://msuir.usm.md/handle/123456789/4432 | |
dc.language.iso | ro | en |
dc.publisher | CEP USM | en |
dc.subject | straturi de AlN | en |
dc.subject | metoda HVPE | en |
dc.subject | metoda AFM | en |
dc.title | EVOLUAREA PARTICULELOR DISPERSATE DE AlN DEPUSE PE Si PRIN METODA HVPE LA ETAPA DE FORMARE A STRATULUI CONTINUU | en |
dc.type | Article | en |