THIN AlN FILMS GROWTH ON Si (III) BY HYDRIDE VAPOR PHASE EPITAXY
| dc.contributor.author | Raevschi, Simion | |
| dc.contributor.author | Davydov, Valerii | |
| dc.contributor.author | Zhilaev, Yurii | |
| dc.contributor.author | Gorceac, Leonid | |
| dc.contributor.author | Botnariuc, Vasile | |
| dc.date.accessioned | 2024-09-30T12:46:41Z | |
| dc.date.available | 2024-09-30T12:46:41Z | |
| dc.date.issued | 2008 | |
| dc.description.abstract | Thin AlN layers have been grown on Si (111) by hydride vapor phase epitaxy (HVPE) method in a horizontal quartz reactor. The surface of layers has been studied by scanning electron microscopy and by the Raman spectroscopy method and found to have the structured morphology. It has been determined that the layers have high specific electrical resistance and are strained in the plane of the substrate. | en |
| dc.description.sponsorship | The work was supported by the State project (No.06.408.039F) of the Republic of Moldova. | en |
| dc.identifier.citation | RAEVSKY, Simion; Valerii DAVYDOV; Yurii ZHILYAEV; Leonid GORCEAC și Vasile BOTNARIUC. Thin AIN films growth on Si (III) by hydride vapor phase epitaxy. Moldavian Journal of the Physical Sciences. 2008, nr. 4(7), pp. 476-480. ISSN 1810-648X. | en |
| dc.identifier.issn | 1810-648X | |
| dc.identifier.uri | https://msuir.usm.md/handle/123456789/16195 | |
| dc.language.iso | en | en |
| dc.title | THIN AlN FILMS GROWTH ON Si (III) BY HYDRIDE VAPOR PHASE EPITAXY | en |
| dc.type | Article | en |
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