INFLUENCE OF DEFECT COMPOSITION ON OPTICAL ACTIVITY OF Mn 2+ IONS IN ZnS CRYSTALS

Abstract

The Mn Zn2+ ion intracentred luminescence in ZnS crystal (max=590nm, FWHM=160-210meV) and its relation to the native, impurity (the background and aluminum) defects formed at the crystal annealing in the bismuth melt at 950oC during 100hrs was studied. The luminescence of the aluminum doped and undoped ZnS single crystals , before and after annealing, were studied. The aluminum presence on the one hand creates sensitizing centers (the radiation bands close to 400nm and 450nm) and on the other hand makes difficult Mn doping of the crystal. It is supposed that the temperature influence on the Mn Zn2+ ion is determined by the position of the electron and hole Fermi cuazi-levels relative to the deep levels, acting as recombination radiative and noneradiative centers the nature of which is determined by the type of crystal lattice defects. The relation between blue centers of recombinative radiation and Mn bands was shown