(Editura USM, 2024) Monaico, Eduard V.; Monaico, Elena I.; Ursaki, Veaceslav V.; Tiginyanu, Ion M.
Porous semiconductor compounds represent a class of materials that has been subjected to intense research in recent years. This work is dedicated to obtaining of self-organized porous layers in InP by electrochemical etching in neutral electrolyte based on NaCl. Accessible technological procedures are presented that allow to control the direction of pore growth. From the systematic study of the SEM images, the impact of the shape of the photoresist mask on the morphology of the obtained porous layer is analyzed. The control of the pore propagation opens new application opportunities in microfluidics. The formation peculiarities of multilayer porous structures obtained in InP and GaAs are discussed. The possibility of electrochemical nanostructuring in neutral electrolyte is also demonstrated on other semiconductor substrates.
