Facultatea de Fizică şi Inginerie / Faculty of Physics and Engineering
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Item Structural and optical properties of ZnO:Ga thin films deposited on ito/glass substrates for optoelectronic applications [Articol](Academia de Ştiinţe a Moldovei, 2021) Rusnac, Dumitru; Lungu, Ion; Colibaba, Gleb; Potlog, TamaraDoped (with GaCl3), undoped ZnO and ITO/ZnO:Ga nanostructured thin films are synthesized using the spray pyrolysis method. The doped ZnO thin films are synthesized at the atomic ratio of Ga/Zn added in the starting solution fixed at 1, 2, 3, and 5. Gallium-doped ZnO films synthesized on glass/ITO substrates are annealed at 4500C in different environments: vacuum, oxygen, and hydrogen. X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), and current–voltage (I–V) measurements are applied to characterize the structural properties, composition, surface morphology, and electrical properties of ZnO:Ga nanostructured thin films. X-ray diffraction analysis shows that ZnO:Ga films deposited on glass substrates have a dense and homogeneous surface with a hexagonal structure. The ZnO:Ga films deposited on glass/ITO substrates are composed of two phases, namely, hexagonal ZnO and cubic ITO. The I–V characteristics show the presence of good ohmic contacts between Al and In metals and ZnO:Ga thin films regardless of the nature of the substrate and the annealing atmosphere.Item Recent advances in Terahertz technology for security and biomedical applications [Articol](Universitatea de Stat din Tiraspol, 2021) Sirkeli, VadimTerahertz waves have low photon energies (~ 4.1 meV for 1 THz), which is about 1 million times weaker than the energy of X-ray photons. They do not cause any harmful ionization in biological tissues. The terahertz radiation is strongly attenuated by water and is very sensitive to water content. This paper provides current status and recent advances in terahertz technology for security and medical applications. In particular, we report on our designs of THz quantum cascade lasers to identify cancerous tissues and other medical issues.Item Люминесцентные характеристики тонких плёнок оксида цинка, полученных методом электрофореза [Articol](CEP USM, 2012) Гоглидзе, Т.И.; Дементьев, И.В.; Задорожный, А.П.; Коваль, А.В.; Петренко, П.А.; Гашин, П.А.Показана возможность осаждения тонких однородных слоёв оксида цинка с низкой проводимостью электрофоретическим методом. Представлены результаты измерений фотолюминесценции тонких слоёв ZnO при температурах 300 К и 77 К.Item Straturi subţiri de oxid de zinc crescute prin metoda pulverizării în flux de argon [Articol](CEP USM, 2018) Botnariuc, Vasile; Gorceac, Leonid; Coval, Andrei; Cinic, Boris; Gaugaș, Petru; Chetruș, Petru M.; Moldovanu, Sergiu; Raevschi, SimionStraturile subţiri de ZnO au fost crescute din acetat de zinc dizolvat în apă-acid acetic-metanol cu o molaritate de 0,2 M folosind metoda pulverizării în intervalul de temperaturi (250-450)°C în flux de argon. Au fost cercetate proprietăţile optice şi electrice ale acestor straturi în dependenţă de temperatura de creștere. Transmitanţa în diapazonul de lungimi de undă (300-1000) nm are valori de 80-85%. Rezistenţa specifică a straturilor subțiri de ZnO crescute la 450°C după tratarea termică în vid şi hidrogen la 450°C timp de o oră se micșorează de la 33 •cm până la 0,028 •cm. Recombinarea radiantă în straturile de ZnO este însoțită de tranziții pe niveluri adânci și de tranziții bandă-bandă la interacțiunea purtătorilor de sarcină cu fononii de tip LO.