Facultatea de Fizică şi Inginerie / Faculty of Physics and Engineering

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    Absorbtia luminii si fotoluminescenta cristalelor GaSe:Eu [Articol]
    (CEP USM, 2012) Untila, Dumitru
    GaSe monocrystals doped with 0,025%, 0,068%, 0,49% at. Eu, optically transparent in wavelengths domain λ>650 nm, were grown by Bridgman method. In addition to structural defects in ...Se-Ga-Ga-Se... stratified package, introduction of the Eu impurities in GaSe leads to the formation of Eu3+ luminescence centers. On the elementary package surface of GaSe doped with 0,49% at. Eu, there are neutral Eu atoms, what by thermic treatment at 400÷450ºC are forming a Eu2O3 and Ga2O3 composite layer.
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    Получение порошкообразных люминесцентных материалов на основе сульфидов Cd и Zn, синтезированных химическим методом [Articol]
    (CEP USM, 2011) Гоглидзе, Татьяна; Дементьев, Игорь; Задорожный, Александр; Соболевская, Раиса
    În lucrare este prezentată tehnologia de obţinere a pulberilor fotoluminescente de CdS şi ZnS. Este cercetată distribuţia spectrală a intensităţii fotoluminescenţei pulberilor de CdS şi ZnS. A fost elaborată metoda de recoacere a pulberilor sintetizate de sulfură de zinc şi cadmiu, fără activatori şi în prezenţă de activatori la temperatura de 900–1000°C, în condiţii diferite, cu acces limitat şi nelimitat de aer.
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    Straturi subţiri de CdS depuse din soluţii lichide (baie chimică) [Articol]
    (CEP USM, 2011) Botnariuc, Vasilii; Gorceac, Leonid; Coval, Andrei; Raevschi, Simion; Micli, Valdec; Cinic, Boris
    Thin layers of CdS were deposited on InP (100) substrates with a (3...5) arc degrees misorientation relative to (110) using water solutions of CdSO4, (NH4)2SO4, NH4OH, NH4Cl and CS(NH2)2 for synthesis. The morphology, atomic composition, photoluminescence and electrical properties of the deposited layers were investigated. The morphology of the CdS layers is characterized by a granular structure that is not changing under thermic treatment. A band in the energy interval (1,55 – 3,1) eV at 77 K with the maximum at 2,282 eV is observed in the photoluminescence spectra of the thin layers. Under thermic treatment from 200°C to 500°C in hydrogen the concentration of charge carriers is increasing from 2⋅1017 cm-3 to 2⋅1018 cm-3.