Facultatea de Fizică şi Inginerie / Faculty of Physics and Engineering

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Author: search.filters.author.Zhilyaev, Yurii

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    Evoluarea particulelor dispersate de ALN depuse pe si prin metoda HVPE la etapa de formare a stratului continuu [Articol]
    (CEP USM, 2011) Raevschi, Simion; Kompan, Mihail; Zhilyaev, Yurii; Gorceac, Leonid; Botnariuc, Vasile
    Evolution of growth of the disperse particles of AlN which has been grown up on substrates of silicon during formation of a continuous layer are studies by AFM (Atomic Force Microscopy ) method. Layers have been grown up by HVPE (Hydride Vapor Phase Epitaxy) method at 1100o C. It is established: a) nunucleation occurs according to three dimensional model; b) layers are formed of two categories of disperse particles; c) growth rate of categories differ; d) at an initial stage of growth there is a latent period of time when superficial concentration of disperse particles remains to a constant.
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    Structura suprafeţei straturilor de AlN depuse pe Si prin metoda HVPE la etapa iniţială de obţinere [Articol]
    (CEP USM, 2010) Raevschi, Simion; Kompan, Mihail; Zhilyaev, Yurii; Gorceac, Leonid; Botnariuc, Vasile
    The surface structure of AIN layers deposited on the Silicon substrates at the initial stage of germination was studied by the Atomic Force Microscopy (AFM) method. The layers have been deposited by the Hydride Vapor Phase Epitaxy (HVPE) at 1100o C. It was determined that: a) germination follows the 3D model; b) mechanisms of layers growth are changing at the initial deposition stage; c) layers relief can be described in the approximation of a polynomial with elementary Gauss functions as arguments.
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    Obţinerea straturilor AIN pe Si prin metoda HVPE şi cercetarea proprietăţilor lor [Articol]
    (CEP USM, 2008) Raevschi, Simion; Davydov, Valerii; Zhilyaev, Yurii; Gorceac, Leonid; Botnariuc, Vasile
    AlN layers on Si(111) were fabricated by Hydride Vapor Phase Eptaxy (HVPE). The obtained layers were studied by using Raman spectroscopy and by scanning electron microscope (SEM). The layers surface is structured. The Raman spectra of the layers, obtained at the temperatures of 800-1100oC, are presented. It was established that the layers are mechanically deformed in substrate plane and have a high value of the threshold voltage (are dielectrics).