Facultatea de Fizică şi Inginerie / Faculty of Physics and Engineering

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Author: search.filters.author.Untila, DumitruSubject: search.filters.subject.photoelectric properties

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    Photoelectric and photoluminescence properties of CdTe–GaTe composite [Articol]
    (2016) Caraman, Iuliana; Spalatu, Nicolae; Evtodiev, Igor; Untila, Dumitru; Leontie, Liviu; Caraman, Mihail
    A GaTe–CdTe composite was obtained by thermal treatment at 1020 K of GaTe single crystals in Cd vapor atmosphere. The composite photoluminescence, photoconductivity, and com- position are studied in this work. The photosensitivity and photoluminescence band structure are determined for both the primary crystals and the composite. The CdTe crystallites create, in the GaTe bandgap, recombination and trapping levels, which determine the structure of the photoluminescence spectra and the spectral range of composite photosensitivity. The photoluminescence spectrum of the composite at 80 K contains characteristic bands of both composite components, GaTe and CdTe. From the analysis of thermally stimulated luminescence curves, the energies of the electron trapping levels in the composite are determined.
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    Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours [Articol]
    (John Wiley & Sons, 2018) Untila, Dumitru; Evtodiev, Igor; Caraman, Iuliana; Spalatu, Nicolae; Dmitroglo, Liliana; Caraman, Mihail
    The structural, optical and photoelectric properties of InSe crystals grown by Bridgman–Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe‐InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS‐NIR spectral region. [ABSTRACT FROM AUTHOR]