Facultatea de Fizică şi Inginerie / Faculty of Physics and Engineering

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Author: search.filters.author.Sushkevich, KonstantinSubject: search.filters.subject.ZnSe

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    Purification of ZnSe crystals from electrically active background impurities by ytterbium doping [Articol]
    (John Wiley & Sons, 2014) Radevici, Ivan; Sushkevich, Konstantin; Sirkeli, Vadim; Nedeoglo, Dmitrii; Nedeoglo, Natalia; Huhtinen, Hannu; Paturi, Petriina
    Hall coefficient, electrical conductivity, and electron mobility are investigated for n-ZnSe:Yb single crystals with high concentration of electrically active background impurities
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    Magnetic and luminescent properties of nickel-doped ZnSe crystals [Articol]
    (Elsevier, 2015) Sirkeli, Vadim; Radevici, Ivan; Sushkevich, Konstantin; Nedeoglo, Natalia; Nedeoglo, Dmitrii
    Magnetic and photoluminescent properties of nickel-doped ZnSe crystals with impurity concentrations varied by changing the Ni amount in the source material from 0.001 to 0.50 at.% are studied in 5–300 K temperature range. Investigation of magnetic properties shows that Ni impurity in ZnSe forms isolated paramagnetic centers and probability of Ni–Ni pairs formation is negligible due to low Ni concentration in the samples. The contribution of Ni impurity to edge emission and its influence on infra-red emission are discussed. It is found that complete concentration quenching of luminescence within all studied spectral range is observed starting with Ni concentration of 0.50 at.%.
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    Photoluminescence of ZnSe samples doped with antimony and iodine [Articol]
    (Elsevier, 2021) Sushkevich, Konstantin; Goncearenco, Evghenii; Nedeoglo, Natalia; Nedeoglo, Dmitrii
    Photoluminescence (PL) spectra of ZnSe samples grown by Chemical Vapour Transport (CVT), Physical Vapour Transport (PVT), and from melt have been studied in the temperature range from 100 to 300 K. Impurity-defect composition of the studied samples was varied by doping with antimony (Sb) or iodine (I), as well as co-doping with Sb and I, both during the crystal growth and crystal annealing in the respective melts. It is established that the PL band with maximum at (570–580) nm is present only in the spectra for ZnSe samples co-doped with Sb and I, independent of growth technique mand doping method. The (SbSe–ISe) radiative centre, with the energy level placed 0.5 eV above the valence band top, is proposed to be responsible for this PL band.