Facultatea de Fizică şi Inginerie / Faculty of Physics and Engineering

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Author: search.filters.author.Raevschi, SimionEnd date: 2009

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    About the edge luminescence of cadmium sulphide thin layers grown on molybdenum [Articol]
    (Institute of Electrical and Electronics Engineers, 1995-11-11) Raevschi, Simion; Gorceac, Leonid; Coval, Andrei; Chetruș, Petru
    CdS layers on to molybdenum were synthesized from separate elements in an open flowing hydrogen set. The surface micromorphology and some electrical and photoluminescent properties were investigated. The nature of layers edge photoluminescence peaks are discussed in the frames of the excitated exciton model.
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    Thin AIN films growth on Si (III) by hydride vapor phase epitaxy [Articol]
    (2008) Raevschi, Simion; Davydov, Valerii; Zhilaev, Yurii; Gorceac, Leonid; Botnariuc, Vasile
    Thin AlN layers have been grown on Si (111) by hydride vapor phase epitaxy (HVPE) method in a horizontal quartz reactor. The surface of layers has been studied by scanning electron microscopy and by the Raman spectroscopy method and found to have the structured morphology. It has been determined that the layers have high specific electrical resistance and are strained in the plane of the substrate.
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    Cercetarea celulelor solare cu heterojoncţiunea nCdS-pInP [Articol]
    (CEP USM, 2009) Gorceac, Leonid; Botnariuc, Vasile; Raevschi, Simion; Coval, Andrei; Chitoroagă, Andrei
    Photoelectrical dependencies of nCdS-pInP solar cells, as a function of electro physical parameters, crystallographic orientation of InP substrate and of the deposition duration of the nCdS epitaxial for layer are presented. It was established that the maximum value of the efficiency of solar energy into electrical one is obtained for the holes concentration in the substrate of 2·1016 cm-3, crystallographic orientation (100) and layer growth duration of 25 min. The hetero structure parameters influencing the named dependencies are determined.
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    Obţinerea straturilor AIN pe Si prin metoda HVPE şi cercetarea proprietăţilor lor [Articol]
    (CEP USM, 2008) Raevschi, Simion; Davydov, Valerii; Zhilyaev, Yurii; Gorceac, Leonid; Botnariuc, Vasile
    AlN layers on Si(111) were fabricated by Hydride Vapor Phase Eptaxy (HVPE). The obtained layers were studied by using Raman spectroscopy and by scanning electron microscope (SEM). The layers surface is structured. The Raman spectra of the layers, obtained at the temperatures of 800-1100oC, are presented. It was established that the layers are mechanically deformed in substrate plane and have a high value of the threshold voltage (are dielectrics).
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    Straturi epitaxiale omogene de CdS obţinute pe InP în hidrogen [Articol]
    (CEP, 2007) Raevschi, Simion; Gorceac, Leonid; Gaugaş, Petru; Botnariuc, Vasile
    Epitaxial layers of the CdS on InP in the open flowing hydrogen system are obtained. Efficiency of zone method growth from a gas phase is shown at deposition of the homogeneous layers of large area.