Facultatea de Fizică şi Inginerie / Faculty of Physics and Engineering

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Author: search.filters.author.Nedeoglo, NataliaSubject: search.filters.subject.photoluminescence spectra

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    Self-absorption of violet radiation in ZnO thin films produced on ZnSe crystal surfaces by isovalent substitution method [Articol]
    (Elsevier, 2018) Goglidze, T.I.; Dementiev, I.V.; Covali, A.V.; Goncearenco, E.P.; Nedeoglo, Natalia; Nedeoglo, Dmitrii
    Photoluminescence (PL) spectra of ZnO thin films produced by isovalent substitution method by means of thermal treatment of zinc selenide single crystal substrates in air are studied in 350 – 750 nm range at room temperature. Irrespective of annealing temperature (500 – 870 °C) and annealing time (20 – 120 min), PL spectra consist of a short-wavelength violet radiation with maximum localized between 396 and 423 nm and a long-wavelength yellow-orange radiation with maximum localized between 575 and 600 nm. Both PL bands are attributed to donor-acceptor (DA) pairs. It is shown that the violet PL band intensity decreases and the yellow-orange PL band intensity increases with increasing ZnO film thickness that is caused by self-absorption of the short-wavelength radiation and energy transmission to DA-pair centres of the long-wavelength radiation.
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    Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion [Articol]
    (2006) Avdonin, A.N.; Nedeoglo, Dmitrii; Nedeoglo, Natalia; Sirkeli, Vadim; Ivanova, G.N.
    Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons (I2I) and VZn acceptorbound excitons (D1I). A model of radiation mechanisms, which explain the redistribution of the edge and long-wave PL bands intensities with increasing doping level of the samples, is proposed.