A GaTe–CdTe composite was obtained by thermal treatment at
1020 K of GaTe single crystals in Cd vapor atmosphere. The
composite photoluminescence, photoconductivity, and com-
position are studied in this work. The photosensitivity and
photoluminescence band structure are determined for both the
primary crystals and the composite. The CdTe crystallites
create, in the GaTe bandgap, recombination and trapping
levels, which determine the structure of the photoluminescence
spectra and the spectral range of composite photosensitivity.
The photoluminescence spectrum of the composite at 80 K
contains characteristic bands of both composite components,
GaTe and CdTe. From the analysis of thermally stimulated
luminescence curves, the energies of the electron trapping
levels in the composite are determined.
