Facultatea de Fizică şi Inginerie / Faculty of Physics and Engineering
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Item Metode experimentale de studiere a stărilor de suprafaţă în compuşii stratificaţi de tip AIII BVI [Articol](Tipografia Universității de Stat „Alecu Russo” din Bălți, 2005-10-05) Blaj, Octavian; Scurtu, Roman; Evtodiev, IgorItem Fotoluminescenţa straturilor nanolamelare de GaSe obţinute prin intercalarea cu Cd [Articol](2012) Dmitroglo, Liliana; Evtodiev, Igor; Caraman, Iuliana; Nedeff, Valentin; Dafinei, AdrianS-au analizat spectrele de emisie fotoluminescentă a lamelor monocristaline p-GaSe cu concentraţia golurilor3•1014 cm-3 şi a lamelor intercalate cu Cd în fază de vapori la temperatura 500 °C. Durata tratamentului termic a fost de 20 şi 24 ore. Spectrul de emisie al cristalelor de GaSe conţine liniile excitonilor direcţi localizaţi cu energia de legătură ~6 meV, prima repetare fononică a acestora (ħωf =20 meV) şi banda de emisie a excitonilor indirecţi cu emisia fononilor cu energia 15 meV. Spectrul de emisie a compozitelor obţinute prin intercalarea lamelor de GaSe cu Cd se obţine în rezultatul suprapunerii benzilor de emisie a compusului CdSe şi banda impuritară a monoseleniurii de galiu. Structura spectrului FL depinde de durata tratamentului termic. La majorarea timpului de tratament se amplifică subbanda corespunzătoare compusului CdSe.Item Nanolamellar structures of Oxide-AIIIBVI: Cd semiconductors type for use as detectors of radiation in the UV spectral region [Articol](Technical University of Moldova, 2011-07-07) Dmitroglo, Liliana; Untila, Dumitru; Chetruș, Petru; Evtodiev, Igor; Caraman, Iuliana; Lazăr, Gabriel; Nedeff, ValentinIn the paper, optical and photoelectrical properties of GaSe and InSe single crystal films of 10-5÷10-7 m submicron thickness and of semiconductor-native oxide structures obtained by annealing at (450÷700)°C in a normal atmosphere, are studied. The absorption spectrum of InSe lamella as well as of GaSe lamella in the energetic range from the red threshold up to 4,5 eV contains three bands with a rapid increase of the absorption coefficient which varies in the limits of (100÷106) cm-1 At the energies higher than 1,25 eV and 2,01 eV for InSe and GaSe respectively the light absorption are determined by the direct optical transitions in the centre of the Brillouin zone and at the energies higher than. At the absorption coefficients of (100÷102)cm-1 the indirect optic transitions are present. 3,0 eV also by the direct optical transitions in the points of the bands high symmetry. The resistive photosensitivity bands cover the spectral range Eg≤ hν ≤ 4,5 eV for lamellar photoresistors in which electric field EC6. The resistive photosensitivity band width could be controlled by the lamella thickness for d ≥1μm. The open circuit voltage spectral distribution is analysed from which results that at the oxidation temperature of 700°C in GaSe layer at the heterojunction interface the defects are formed on which the charge carriers, collected in the junction, are dissipated. The noneequilibrium charge carrier free path is of 0,8 μm.Item Optical and photoelectrical properties of GaS and CdTe thin FILMS, components of GaS/CdTe heterojunctions [Articol](2006) Cuculescu, Elmira; Evtodiev, Igor; Caraman, Mihail; Rusu, MihaelaIn the paper, experimental results concerning the absorption and photosensibility spectral dependence of GaS and CdTe thin film components of GaS/CdTe heterojunctions are presented. GaS films (d = 0.06 μm – 2.8 μm) were deposited onto ITO substrate by laser light pulses. CdTe films (d = 3.6 μm) were deposited onto GaS films by close-spaced sublimation technique. At the fundamental absorption edge, the absorption coefficient of CdTe layers increases of five orders of magnitude in a narrow 40 – 100 meV energy range, up to 4 104cm-1. At room temperature, the energy band of GaS/CdTe heterojunctions photosensitivity is 1.45 eV-2.75 eV, the photocurrent having a constant value up to 2.0 eV photon energy.Item Absorption spectra and extrinsic photoconductivity of Cu and Cd doped GaSe single - Crystal films [Articol](2006) Cuculescu, Elmira; Evtodiev, Igor; Caraman, Mihail; Rusu, George G.GaSe single crystal films were doped during growth process with Cu or Cd atoms with concentration ranged between 0.05 and 0.50 at. %. Single crystal films (with thickness about 0.5 μm) were obtained by mechanical splitting of bulk single crystals. Impurity concentration was determined using atomic emission spectroscopy. Spectral dependences of absorption coefficient and photoconductivity were studied in the range 1.50 eV – 3.70 eV. It was experimentally established that the absorption spectra have an additional absorption band and its corresponding energy depends on the nature (Cu or Cd) and concentration of the doping atoms. Also, independently on the presence of the dopant, other two absorption bands in the IR region are present.Item Study of generation-recombination processes of non-equilibrium charge carriers in single crystalline thin GaSe(Cu) films [Articol](2006) Cuculescu, Elmira; Evtodiev, Igor; Caraman, Mihail; Leontie, LiviuThe generation-recombination processes of non-equilibrium charge carriers in undoped and Cu-doped (in the range 0.1-0.5 at.%.) single crystalline GaSe films with thickness d in the range 1.5-225 μm are investigated. Cu doping of GaSe crystals up to 0.5 at.% leads to an increase of electrical conductivity by over 4 orders of magnitude, as well to enhancement of impurity luminescence band (PL) and extension of photoconductivity spectral range. By studying PL and photonductivity spectra, for different excitation (photon) energies in temperature range (78-420) K, energies of localized states due to both Cu and accidental impurities are determined. By analysing temperature dependence of electrical conductivity and photoconductivity for undoped and Cu-doped films, the activation energy of acceptor levels in doped films was determined as 0.058 and 0.025 eV. Increasing Cu doping from 0.1 to 0.5 at.%. results in decreasing energy of acceptor levels up to ∼0.02 eV. By analysing the impurity absorption and photoconduction at 78 K the energy of acceptor levels was determined as 12-15 meV greater than previously evaluated, depending on Cu concentration. For films with d<5 μm, the surface states concentration increased for Cu doping over 0.3 at.%.Item Optical properties of p -GaSe single crystals doped with Te [Articol](2009) Evtodiev, Igor; Leontie, Liviu; Caraman, Mihail; Stamate, Marius D.; Aramă, EfimOptical absorption in the region of fundamental absorption edge and photoluminescence at 78 and 293 K of p-GaSe crystals doped with Te 0.05, 0.10, and 0.05 at. % have been studied. At low concentrations 0.05 at. %, Te atoms liquidate structural defects in GaSe single crystals and modify their excitonic absorption and photoluminescence. For increased concentrations of 0.10 and 0.50 at. %, Te creates impurity states responsible for the red shift of the fundamental absorption edge of GaSe and appearance of new photoluminescence bands, B at 2.000 eV and C at 1.700 eV. The activation energies of the thermal quenching of Te-related PL bands B and C was found to be 28 and 32 meV for T 150 K and 84 and 62 meV for T 150 K, respectively.Item Optical properties of bismuth oxide thin films prepared by reactive d.c. magnetron sputtering onto p-GaSe (Cu) [Articol](2008) Leontie, Liviu; Caraman, Mihail; Evtodiev, Igor; Cuculescu, Elmira; Mija, AnaBismuth oxide (Bi2O3) thin films with thickness in the range 20 – 160 nm have been deposited by d.c. reactive magnetron sputtering of Bi in an atmosphere Ar : O2 (1 : 1), onto single crystalline p-GaSe (Cu) substrates. The optical constants, n and k, of oxide films have been determined from the analysis of the polarization ellipse of the reflected radiation from outer surface of Bi2O3/p-GaSe structures. In the wavelength range 400 – 800 nm the refractive index of nanometric Bi2O3 films onto GaSe(Cu) decreases from 2.10 to 1.78 and it seen to in- crease at decreasing sample thickness. In order to determine the interaction mechanism between semiconducting oxide film and GaSe surface, the spectral characteristics of photocurrent through Bi2O3/p-GaSe junc- tion and optical absorption in the range 400 – 800 nm have been examined. As resulted from respective analyses, Bi2O3 film generates new valence bonds, which contribute to the in- crease in the density of localized states at Bi2O3/p-GaSe (Cu) junction interface.Item Probleme propuse la Olimpiada Republicană de Fizică – 2003 [Articol](2003) Evtodiev, Igor; Cliucanov, Alexandr; Cojuhari, Dumitru; Andronic, IulianaItem Structuri nanolamelare semiconductor GaSe:Cd – oxid propriu ca adsorbant selectiv de gaze [Articol](CEP USM, 2012) Dmitroglo, Liliana; Evtodiev, Igor; Caraman, Iuliana; Lazar, GheorgheDin monocristale ε-GaSe crescute prin metoda Bridgman au fost obţinute lame cu grosimi de 10÷300 μm cu axa C6 orientată perpendicular pe suprafaţa (001). Prin tratament la temperatura de 450÷580°C suprafeţele lamelor au fost acoperite cu oxid propriu (Ga2O3) nanostructurat. Absorbţia moleculelor polare din atmosferă (H2O, CO, CON) s-a studiat prin metoda spectroscopiei IR absorbţionale. Au fost determinate benzile de absorbţie ale acestor molecule şi dependenţa transmitanţei optice în funcţie de concentraţia moleculelor adsorbite.
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