Facultatea de Fizică şi Inginerie / Faculty of Physics and Engineering

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    Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours [Articol]
    (John Wiley & Sons, 2018) Untila, Dumitru; Evtodiev, Igor; Caraman, Iuliana; Spalatu, Nicolae; Dmitroglo, Liliana; Caraman, Mihail
    The structural, optical and photoelectric properties of InSe crystals grown by Bridgman–Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe‐InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS‐NIR spectral region. [ABSTRACT FROM AUTHOR]
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    Optical properties of ZnO thin films obtained by heat treatment of Zn thin films on amorphous SiO2 substrates and single crystalline GaSe lamellas [Articol]
    (Elsevier, 2016) Dmitroglo, Liliana; Evtodiev, Igor; Untila, Dumitru
    Optical absorption and photoluminescence of polycrystalline ZnO films obtained by thermal oxidation of Zn thin films deposited on amorphous SiO 2 (quartz) and (0001) surface of single crystalline GaSe lamellas have been investigated. The absorption edge of submicrometric ZnO films on quartz is determined by direct transitions corresponding to an optical band gap of 3.88 eV, at 300 K. For ZnO films with thickness between 1.5 and 10 μm, the absorption threshold is of excitonic nature. Photoluminescence of polycrystalline ZnO films on amorphous quartz reaches its maximum in the orange spectral range, while that of ZnO films on oriented single crystalline GaSe substrate covers the entire visible range. [ABSTRACT FROM AUTHOR]