The structural, optical and photoelectric properties of InSe crystals grown by Bridgman–Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe‐InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS‐NIR spectral region.
(2008) Caraman, Mihail; Evtodiev, Igor; Cuculescu, E.
Alkaline solutions of the Li, K, andNa are used in electrical accumulators. The accumulating capacity is considerably higher comparing to technical accumulators if the principle of intercalation of the metals of group I of type AIIIBVI [1, 2] of the layered semiconductor is used. Usually variations of the compound In – Se [3] are used as electrodes. Semiconductors GaSe and GaS are not very often used as intercalated electrodes because their electrical resistivity is much higher comparing to the semiconductors InSe and modifications In2Se3.
