The structural, optical and photoelectric properties of InSe crystals grown by Bridgman–Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe‐InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS‐NIR spectral region. [ABSTRACT FROM AUTHOR]
