Optical absorption in the region of fundamental absorption edge and photoluminescence at 78 and
293 K of p-GaSe crystals doped with Te 0.05, 0.10, and 0.05 at. % have been studied. At low
concentrations 0.05 at. %, Te atoms liquidate structural defects in GaSe single crystals and
modify their excitonic absorption and photoluminescence. For increased concentrations of 0.10 and
0.50 at. %, Te creates impurity states responsible for the red shift of the fundamental absorption
edge of GaSe and appearance of new photoluminescence bands, B at 2.000 eV and C at 1.700
eV. The activation energies of the thermal quenching of Te-related PL bands B and C was found
to be 28 and 32 meV for T 150 K and 84 and 62 meV for T 150 K, respectively.
