Browsing by Author "Raevschii, Simion"

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    CdS nanometric layers grown on SnO2 coated glass substrates for photovoltaic devices [Articol]
    (2012) Botnariuc, Vasile; Gorceac, Leonid; Coval, Andrei; Chetruș, Petru; Cinic, Boris; Raevschii, Simion; Micli, Valdec
    CdS layer thickness decreases at high substrate temperatures due to the fact that a part of CdCl2/(NH2)2 CS aqueous solution evaporates without reaching the substrate surface. CdS layers deposited at the substrate temperature from 250oC to 450oC are growing with a deficit of sulfur. CdS layers with better stoichiometry were grown in the conditions when in the solutions, used for CdS layers growing, there is an excess of thiourea (CdCl2/ TU =1:2). The high charge carrier concentration of 1020cm-3 in CdS layers grown on glass substrates coated with SnO2 layer is related to Sn doping of the layers from SnO2 layer.