Repository logo
Communities & Collections
All of DSpace
  • English
  • العربية
  • বাংলা
  • Català
  • Čeština
  • Deutsch
  • Ελληνικά
  • Español
  • Suomi
  • Français
  • Gàidhlig
  • हिंदी
  • Magyar
  • Italiano
  • Қазақ
  • Latviešu
  • Nederlands
  • Polski
  • Português
  • Português do Brasil
  • Srpski (lat)
  • Српски
  • Svenska
  • Türkçe
  • Yкраї́нська
  • Tiếng Việt
Log In
New user? Click here to register.Have you forgotten your password?
  1. Home
  2. Browse by Author

Browsing by Author "Petersen, Deik"

Filter results by typing the first few letters
Now showing 1 - 1 of 1
  • Results Per Page
  • Sort Options
  • Thumbnail Image
    Item
    Synthesis and properties of β-Ga2O3 nanowires and nanosheets on doped GaS:Mn substrates [Articol]
    (2024) Sprincean, Veaceslav; Haoyi, Qiu; Lupan, Oleg; Tjardts, Tim; Petersen, Deik; Veziroglu, Salih; Adelung, Rainer; Caraman, Mihail
    In this work, the synthesis, morphology, optical and luminescence properties of Mn-doped β-Ga2O3 (Ga2O3:Mn) nanowires/nanosheets on Mn-doped GaS (GaS:Mn) substrate are studied. The aim was to obtain structures of semiconductors with layers of nanoformations (nanowires, nanosheets) from a wide energy band semiconductor such as β-Ga2O3 and to determine their characteristic properties. For the base material, Mn-doped GaS lamellae were chosen, which are optically transparent in the spectral region where the optical properties of Mn2+ and Mn3+ ions are manifested. Through thermal annealing, single-crystalline β-GaS plates doped with 1.3 atomic percent (at.%) of manganese (Mn) are exposed to an atmosphere enriched with H2O vapor at a temperature of 800 ◦C for 6 h. As a result, the surface of these plates is covered with a composite layer consisting of crystallites of α-Ga2S3:Mn and β-GaS:Mn planar junctions. This composite exhibits a direct band gap of 2.88 eV and an indirect band gap of 2.55 eV corresponding to the β-GaS:Mn crystallites. Upon further increasing the temperature during thermal annealing to 850 ◦ C and 920 ◦C, the surface of the β-GaS:Mn samples transform into a layer of β-Ga2O3: Mn nanowires/nanosheets with a band gap of 4.5 eV. Its intense green-orange photoluminescence is caused by electronic transitions within the Mn2+ ion.

DSpace software copyright © 2002-2025 LYRASIS

  • Privacy policy
  • End User Agreement
  • Send Feedback
Repository logo COAR Notify