Browsing by Author "Nasedchina, Nadejda"

Now showing 1 - 9 of 9

Difuzia Ag sub acțiunea razelor x în structurile cu straturi subțiri As2S3 dopate cu Fe [Articol]
(CEP USM, 2022-11-10) Nasedchina, Nadejda; Prilepov, Vladimir; Sandu, Mădălina; Chiriţa, Arcadii
Difuzia Cu în structurile cu straturi subțiri (As2S3)0,99 (Bi2Se3)0,01 sub acțiunea radiațiilor vizibile și razelor X [Articol]
(CEP USM, 2022-11-10) Prilepov, Vladimir; Nasedchina, Nadejda; Maistruc, Irina; Chiriţa, Arcadii
Elaborarea tehnologiilor de depunere în vid a structurii varizonice (As2Se3 – As2S3 + Sn) [Articol]
(CEP USM, 2007) Corşac, Oleg; Neamţu, Sevastian; Nasedchina, Nadejda
The paper represents the result of the elaboration of the technology for obtaining layers with graded band-gap longitudinal structure on the flexible dynamic films.The technological regimes for obtaining the longitudinal graded band-gap layer of As2Se3 – As2S3 + Sn were specified. Electro physic properties of these layers determinate their wide application in obtaining the photo-thermo-plastic films.
The electrical transport mechanism in the (nCdS–рAs2Se3) heterojunctions [Articol]
(2008) Goglidze, Tatiana; Dementiev, Igor; Dmitriev, Serghei; Nasedchina, Nadejda; Mațcova, Natalia
In the given paper we present results of I-V characterization of thin film heterojunctions on the basis of (nCdS)–(рAs 2 Se3 ). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous рAs 2 Se3 layers. The possible mechanisms of the current passing through obtained structure are discussed on the basis of results of I-V measurements performed at the different polarities and electrical field intensities in the heterojunction.
Înregistrarea imaginilor în raze X ale microobiectelor pe structuri polimer/As-Se-S dopate cu Sn, Te și Bi [Articol]
(CEP USM, 2024) Chirita, Arcadi; Nasedchina, Nadejda; Maistruc, Irina; Sandu, Mădălina
The processes of X-ray image recording on polymer/As-Se-S structures doped with tin, tel lurium, and bismuth were investigated. The possibility of recording images of micro-wires made of tungsten and tin in X-ray radiation was demonstrated.
Semiconductori calcogenici sticloși pe bază de As-Se-S dopați cu staniu pentru înregistrarea informației optice [Articol]
(CEP USM, 2020) Prilepov, Vladimir; Nasedchina, Nadejda; Spoială, Dorin; Matei, Leonid; Chirița, Arcadii
Au fost cercetate proprietăţile optice şi fotoelectrice ale straturilor subţiri pe bază de semiconductori calcogenici sticloşidin sistemul arsen -seleniu-sulf dopate cu staniu.
The structure polymer/as-se-s doped by bi for X-ray imaging [Articol]
(2023) Kiritsa, Arcady; Huștuc, Alexandru; Nasedchina, Nadejda; Vatavu, Sergiu
The polymer/67at %(As 2S 3) 0,985 (Bi2Se3) 0,015:33 at.% As 2Se3 structure for X-ray imaging has been investigated. The possibility of registering relief-phase images for radiation of “white” spectrum of tungsten anode X-ray tube was shown.
STRUCTURI FOTOSENSIBILE PE BAZĂ DE SEMICONDUCTORI CALCOGENICI STICLOŞI DIN SISTEMUL As-Se-S PENTRU ÎNREGISTRAREA INFORMAŢIEI OPTICE
(CEP USM, 2019) Prilepov, Vladimir; Nasedchina, Nadejda; Spoială, Dorin; Chiriţa, Arcadii
A fost elaborată tehnologia de depunere în vid a straturilor subţiri din sistemul As-Se -S într-un câmp electrostatic de tensiune înaltă. Experimental este arătatcă straturile subţiri de semiconductori calcogenici sticloşi obţinute prin metoda evaporării termice în vid în prezenţa câmpului electrostatic de intensitate înaltă au o eficacitate difracţională de ordinul +1 sporită, în comparaţie cu cele obţinute în absenţa câmpului.
Studies of vanadium and vanadium oxide based nanocomposite structures [Articol]
(2017) Prilepov, Vladimir; Gashin, Peter A.; Popescu, Mihai; Zalamai, Victor; Spoiala, Dorin; Ketrush, Petru; Nasedchina, Nadejda
The results of the surface morphology studies as well as optical and electrical properties of nano-dimensional vanadium oxide composite structures deposited on various substrates- silica, glass substrates covered by conducting layer of SnO2, pure pyroceramics plates and the same covered by Al2O3, SiO2, Ta2O5 layers are presented. According to Raman spectroscopy results the thin film structure obtained on quartz corresponds to the -V2O5 orthorhombic phase. In contrast with this the Raman spectra of V2O5 films obtained on pyroceramics substrates, passivated by Al2O3, Ta2O5, SiO2 oxides, do not appear clearly marked narrow lines which indicate their amorphous character. The investigation of the optical properties of the fabricated layers in the spectral range of 200-1000 nm had revealed the presence of both allowed direct and indirect electron transitions. In the frequency range of 103-107 Hz the real Z' and imaginary Z'' part of the total impedance of pyroceramics/Al2O3/Al/V2O5/Al structure were studied. The applied direct bias leads to a considerable Z', as well as Z'' decrease. The analysis of the obtained dependencies is carried out by using the method of equivalent circuits.