Browsing by Author "Monaico, Eduard V."

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    AERO-TiO2 PREPARED ON THE BASIS OF NETWORKS OF ZnO TETRAPODS
    (2022) Ciobanu, Vladimir; Ursachi, Veaceslav; Lehmann, Sebastian; Braniște, Tudor; Raevschi, Simion; Zamalai, Victor V.; Monaico, Eduard V.; Colpo, Pascal; Nielsch, Kornelius; Tighineanu, Ion
    In this paper, new aeromaterials are proposed on the basis of titania thin films deposited using atomic layer deposition (ALD) on a sacrificial network of ZnO microtetrapods. The technol-ogy consists of two technological steps applied after ALD, namely, thermal treatment at different temperatures and etching of the sacrificial template. Two procedures are applied for etching, one of which is wet etching in a citric acid aqua solution, while the other one is etching in a hydride vapor phase epitaxy (HVPE) system with HCl and hydrogen chemicals. The morphology, composition, and crystal structure of the produced aeromaterials are investigated depending on the temperature of annealing and the sequence of the technological steps. The performed photoluminescence analysis suggests that the developed aeromaterials are potential candidates for photocatalytic applications.
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    Nanostructurarea electrochimică dirijată a compușilor semiconductori în electrolit prietenos mediului înconjurător
    (Editura USM, 2024) Monaico, Eduard V.; Monaico, Elena I.; Ursaki, Veaceslav V.; Tiginyanu, Ion M.
    Porous semiconductor compounds represent a class of materials that has been subjected to intense research in recent years. This work is dedicated to obtaining of self-organized porous layers in InP by electrochemical etching in neutral electrolyte based on NaCl. Accessible technological procedures are presented that allow to control the direction of pore growth. From the systematic study of the SEM images, the impact of the shape of the photoresist mask on the morphology of the obtained porous layer is analyzed. The control of the pore propagation opens new application opportunities in microfluidics. The formation peculiarities of multilayer porous structures obtained in InP and GaAs are discussed. The possibility of electrochemical nanostructuring in neutral electrolyte is also demonstrated on other semiconductor substrates.