Browsing by Author "Gashin, Peter A."

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    KINETICS OF PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF CdS/CdTe HETEROJUNCTIONS
    (2005) Vatavu, Sergiu; Caraman, Iuliana; Gashin, Peter A.
    The photoluminescence and absoption spectral distribution close to the edge of fundamental band were studied in the CdS and CdTe films components of the CdS/CdTe heterojunctions. Recombination level energetic position was determined. The annealing of the CdS/CdTe heterojunctions in presence of CdCl2 results in formation of new recombination levels, revealed by a luminescent band in the energy range of 1.6-1.7 eV and by the shift of the impurity band maximum to the red wavelength region by 50 meV.
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    STUDIES OF VANADIUM AND VANADIUM OXIDE BASED NANOCOMPOSITE STRUCTURES
    (2017) Prilepov, Vladimir; Gashin, Peter A.; Popescu, Mihai; Zalamai, Victor; Spoiala, Dorin; Ketrush, Petru; Nasedchina, Nadejda
    The results of the surface morphology studies as well as optical and electrical properties of nano-dimensional vanadium oxide composite structures deposited on various substrates- silica, glass substrates covered by conducting layer of SnO2, pure pyroceramics plates and the same covered by Al2O3, SiO2, Ta2O5 layers are presented. According to Raman spectroscopy results the thin film structure obtained on quartz corresponds to the -V2O5 orthorhombic phase. In contrast with this the Raman spectra of V2O5 films obtained on pyroceramics substrates, passivated by Al2O3, Ta2O5, SiO2 oxides, do not appear clearly marked narrow lines which indicate their amorphous character. The investigation of the optical properties of the fabricated layers in the spectral range of 200-1000 nm had revealed the presence of both allowed direct and indirect electron transitions. In the frequency range of 103-107 Hz the real Z' and imaginary Z'' part of the total impedance of pyroceramics/Al2O3/Al/V2O5/Al structure were studied. The applied direct bias leads to a considerable Z', as well as Z'' decrease. The analysis of the obtained dependencies is carried out by using the method of equivalent circuits.