Browsing by Author "Evtodiev, Silvia"
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Item ABSORBŢIA LUMINII ŞI FOTOLUMINESCENŢA IONILOR Eu3+ ÎN CRISTALE DE CaF2(CEP USM, 2012) Untila, Dumitru; Racoveț, Oxana; Evtodiev, Silvia; Caraman, MihailFrom optical transmittance and photoluminescence measurements of natural crystals of CaF2:Eu was established the correlation between energy states diagram of Eu3+ ion and the structure of these bands. Photon absorption in this material occurs at electronic transitions from the 7F0 level on the G, D, L configuration levels of Eu3+ ion. Because 7F1 level population is much smaller than the 7F0 fundamental level population, the photon absorption intensity which involving 7F1 level is not evident in absorption spectra at room temperature. CaF2:Eu3+ crystal photoluminescence is determined by electron radiative transitions from 5 D0 level to the low energy levels 7F0, 7F2 and, perhaps, 7F3.Item ABSORBȚIA OPTICĂ ȘI FOTOLUMINESCENȚA COMPOZITULUI Ga2S3-Ga2O3(Universitatea Tehnică din Moldova, 2018-05-24) Сaraman, Iuliana; Evtodiev, Igor; Untilă, Dumitru; Dmitroglo, Liliana; Caraman, Mihail; Evtodiev, Silvia; Palachi, LeonidÎn această lucrare sunt studiate absorbția optică și fotoluminescența cristalelor de Ga2S3, obținute prin metoda CVT în atmosferă de I2, și a compozitului Ga2S3–Ga2O3, obținut prin tratament termic al monocristalelor de Ga2S3 în atmosferă normală, la temperatura 1073K. S-a determinat că în rezultatul tratamentului termic de lungă durată (12 ore) suprafața cristalelor de Ga2S3 se acoperă cu un strat granular de Ga2O3. Din măsurări ale reflexiei difuze, lățimea benzii interzise a stratului de Ga2O3 de pe suprafața monocristalului Ga2S3 a fost aproximată ca fiind egală cu 4,47 eV. La 300K, marginea benzii de absorbție a cristalelor de Ga2S3 este formată din trei sectoare în care au loc tranziții optice directe cu lățimea benzii interzise egală cu 3,020 eV, 3,178 eV și 3,312 eV, iar la 80K - cu 3,196 eV, 3,302 eV și 3,422 eV. Spectrul de FL a cristalelor de Ga2S3 conține doar o singură bandă în regiunea roșu a spectrului, ce se interpretează ca emisie radiativă a stratului de Ga2S3, iar spectrul de FL al compozitului Ga2S3–Ga2O3 pe lângă banda roșie conține și o bandă în regiunea violet–albastru a spectrului, ce se identifică ca emisie radiativă în cristalele de oxid din compozitul Ga2O3-Ga2S3.Item GROWTH AND CHARACTERIZATION OF Eu DOPED GaSe SINGLE CRYSTALS BY X-RAY DIFFRACTION AND RAMAN SPECTROSCOPY(CEP USM, 2017) Untila, Dumitru; Evtodiev, Igor; Caraman, Iuliana; Kantser, Valeriu; Spalatu, Nicolae; Dmitroglo, Liliana; Evtodiev, Silvia; Spoială, Dorin; Rotaru, Irina; Gașin, PetruGaSe single crystals doped with Eu (0.025, 0.05, 0.5, 1.0 and 3.0 at%) were grown by Bridgman method using Ga, Se and Eu elementary components. The crystalline structure and vibration modes of the GaSe: Eu crystals lattice were studied by X-ray diffraction and Raman spectroscopy. Eu atoms arranged in the van der Waals space of GaSe: Eu crystals form Eu-Se valence bonds and restructure hexagonal lattice of GaSe leading to EuGa2Se4 crystallites formation. Defects generated by EuGa2Se4 crystallites lead to broadening and shifting of single phonon peaks present in Raman spectra towards shorter wavenumbers, and at the same time, activate the longitudinal optical vibrations of EuSe sublattice.Item INSTRUMENTE INTERACTIVE DE MĂSURĂ PENTRU ÎNVĂŢĂMÂNTUL MODERN(CEP USM, 2014) Luchian, Efimia; Evtodiev, Silvia; Rotaru, Irina; Untila, DumitruItem LABORATOR DE ŞTIINŢE INTEGRATE DIDACT VEGA PENTRU ÎNVĂŢĂMÂNTUL PREUNIVERSITAR(Tipografia "CentroGrafic" ,Cahul, 2015) Evtodiev, Silvia; Luchian, Efimia; Evtodiev, Igor; Untilă, Dumitru; Caraman, MihailExperimental investigations are a set of analysis techniques and methods, very important for today's society and in particularly for undergraduate and graduate education. To achieve the objectives and purpose in the most efficient way, in this paper were chosen solutions offered by the PASCO company (Didact Vega), whose equipments offers a wide range of procedures for conducting investigations. SPARKscience includes reading, data analysis and real time processing software, SPARKvue and capstone. Data acquisition system includes over a thousand PASPORT sensors for physics, chemistry, biology and environmental engineering. The SPARK mobile system can be used for experimental investigations both in laboratory and in the field. Integrated Science Laboratory contains a broad and well-structured base of labs (SPARKlab) offers to pupil/student/teacher the posibility to increase the level, volume and quality of experimental investigations in the field of Integrated Sciences .Item OPTICAL PROPERTIES OF GaTe-ZnTe NANOLAMELLAE COMPOSITE(2015) Spalatu, Nicolae; Evtodiev, Igor; Caraman, Iuliana; Evtodiev, Silvia; Rotaru, Irina; Caraman, Mihail; Untilă, DumitruA material composed of GaTe and ZnTe crystallites with average diameter of ~ 37 nm and 68 nm respectively was obtained by heat treatment at the temperature of 1000K and 1073K of GaTe plates in Zn vapour for 24 hours. The absorbance spectra of composite material obtained at 1073K and that calculated from diffuse reflection using the Kubelka-Munk formula contains the bands characteristic for light absorption in ZnTe and GaTe crystallites. The photoluminescence spectrum of composite material at the temperature of 80K is composed to the excitonic band in GaTe and impurity bands of ZnTe crystallites.Item Optical Properties of III–VI Lamellar Semiconductors Doped with Cu and Cd and of Related III–VI/Native Oxide Structures(American Scientific Publishers, 2011) Evtodiev, Silvia; Caraman, Iulia; Dmitroglo, Liliana; Leontie, L.; Nedeff, V.; Dafinei, A.; Lazar, G.; Evtodiev, I.GaS, GaSe and GaTe are typical representatives of III–VI layered semiconductor materials, showing highly anisotropic mechanical and optical properties. At photon energies hν < E g , the anisotropy ratio for the absorption coefficients at the n = 1 excitonic peak, corresponding to E →‖C → and E →⊥C → polarizations, is α ‖/α ⊥≈15. Optical functions n e (λ) and n o (λ) of GaS and GaSe in the wavelength range 0.36–22 μm have been determined. For the photon energies hν < E g ind, these correspond to a normal dispersion and can be described by power-law wavelength dependences. By means of FTIR transmission and reflection spectroscopy in the spectral range of 1000–85 cm−1, for plan-parallel plates with thickness between several tens of nanometers and centimeters, the wavenumbers of longitudinal optical ν(LO) and transverse optical ν(TO) phonons have been determined for GaSe [ν ⊥(LO) = 254 cm−1, ν ⊥(TO) = 214 cm−1], GaS [ν ⊥(LO) = 359 cm−1, ν ⊥(TO) = 297 cm−1, ν ‖(LO) = 336 cm−1], and GaTe [ν(LO) = 164 cm−1, ν(TO) = 118 cm−1].Item PHOTOLUMINESCENCE OF NANOCOMPOSITES OBTAINED BY HEAT TREATMENT OF GaS, GaSe, GaTe AND InSe SINGLE CRYSTALS IN Cd AND Zn VAPOR(2016) Evtodiev, Igor; Caraman, Iuliana; Kantser, Valeriu; Untila, Dumitru; Rotaru, Irina; Dmitroglo, Liliana; Evtodiev, Silvia; Caraman, MihailThe photoluminescence (PL) spectra of GaS, GaSe, GaTe and InSe semiconductors used as the basis materials to obtain nanocomposite by heat treatment in Zn and Cd vapor were studied. The PL spectra of ZnS–GaS, CdSe– GaSe, CdSe–InSe, ZnSe–InSe composites consist of wide bands covering a wide range of wavelengths in the antistokes region for CdSe, ZnSe and GaS crystallites from composites. The antistokes branches of spectra are interpreted as the shift of PL bands to high energies for nanosized crystallites.Item SOLUŢII DE LABORATOR EXPERIMENTAL ÎN DOMENIUL ŞTIINŢELOR INTEGRATE(CEP USM, 2014) Evtodiev, Igor; Evtodiev, Silvia; Oloieru, Vlad; Untila, Dumitru; Caraman, MihailItem SOLUŢII MODERNE PENTRU ÎNVĂŢĂMÂNT INTERACTIV(CEP USM, 2014) Evtodiev, Silvia; Evtodiev, Igor; Mateian, CălinItem STRUCTURAL AND OPTICAL PROPERTIES OF COMPOSITES CONTAINING A III B VI AND A II B VI SEMICONDUCTORS(2017) Evtodiev, Igor; Untila, Dumitru; Evtodiev, Silvia; Caraman, Iuliana; Gasin, Petru; Dmitroglo, Liliana; Rotaru, Irina; Kantser, ValeriuBy thermal annealing of InSe, GaSe, and GaTe crystals in Zn vapors at 800, 870, and 1050K, respectively, a material consisting of ZnSe crystallites in both GaSe and InSe and ZnTe in GaTe has been prepared. Structural defects induced by intercalated atoms shield excitonic bonds in primary compounds and form both radiative recombination levels and electron trapping levels localized deep in the band gap of AIIIBVI crystals. The energies of trapping levels have been determined from thermally stimulated luminescence curves.