Browsing by Author "Davydov, Valerii"

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    OBŢINEREA STRATURILOR AlN PE Si PRIN METODA HVPE ŞI CERCETAREA PROPRIETĂŢILORLOR
    (CEP USM, 2008) Raevschi, Simion; Davydov, Valerii; Zhilyaev, Yurii; Gorceac, Leonid; Botnariuc, Vasile
    AlN layers on Si(111) were fabricated by Hydride Vapor Phase Eptaxy (HVPE). The obtained layers were studied by using Raman spectroscopy and by scanning electron microscope (SEM). The layers surface is structured. The Raman spectra of the layers, obtained at the temperatures of 800-1100oC, are presented. It was established that the layers are mechanically deformed in substrate plane and have a high value of the threshold voltage (are dielectrics).
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    THIN AlN FILMS GROWTH ON Si (III) BY HYDRIDE VAPOR PHASE EPITAXY
    (2008) Raevschi, Simion; Davydov, Valerii; Zhilaev, Yurii; Gorceac, Leonid; Botnariuc, Vasile
    Thin AlN layers have been grown on Si (111) by hydride vapor phase epitaxy (HVPE) method in a horizontal quartz reactor. The surface of layers has been studied by scanning electron microscopy and by the Raman spectroscopy method and found to have the structured morphology. It has been determined that the layers have high specific electrical resistance and are strained in the plane of the substrate.