Browsing by Author "Anghel, Sergiu"

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    Optical properties of crzstals GaSe and InSe doped with Cu [Articol]
    (2005) Evtodiev, Igor; Cuculescu, Elvira; Caraman, Mihail; Anghel, Sergiu; Petrov, M.
    The anisotropy of absorption spectra in the range of the margin of fundamental band of the crystals GaSe and InSe doped with Cu in the percentage quantities up to 0.5 % at. from which the implementation mechanism of the impurity atoms of Cu in the hexagonal crystal grating of the GaSe and InSe crystals and the localization energy of the impurity levels in the forbidden energetic band is studied.
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    Unele proprietăţi optice ale straturilor subţiri de gase şi gas dotate cu Cu [Articol]
    (CEP USM, 2007) Gaşin, Petru; Cuculescu, Elmira; Evtodiev, Igor; Anghel, Sergiu; Caraman, Mihail
    GaS and GaSe doped with Cu thin films have been deposited by "flash" evaporation. The thickness of the layers varied from 138 to 1450 nm. The absorption spectra in the fundamental band edge region have been studied. The optical band gap has been determined as follows: 2.42 eV for GaS (Cu) and 1.92 eV for GaSe (Cu). The fabrication temperature for obtaining amorphous and nanocrystalline GaSe has been determined as 390 K and 623 K respectively.