Evtodiev, Igor2018-07-062018-07-062009EVTODIEV, Ig. Excitonic absorption of the light in heterojunctions Bi 2 O 3 -InSe. In: Moldavian Journal of the Physical Sciences. 2009, nr. 2, pp. 163-168. ISSN 1810-648X.1810-648Xhttps://msuir.usm.md/handle/123456789/1763The interface layer of the Bi2O3/InSe:Cd (0.10 at. %) heterojunction was investigated using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 1.328eV. Its direct optical band gap corresponds to electron transitions at the M point of the Brillouin zone, and is equal to 2.557 eV at 78 K.ensemiconductorArticle