Braniste, TudorDragoman, MirceaAlyabyeva, LiudmilaZhukov, SergeyCiobanu, VladimirAldrigo, MartinoRaevschi, SimionDragoman, DanielaIordanescu, SergiuShree, SinduGorshunov, BorisAdelung, RainerTiginyanu, Ion2021-12-072021-12-072019BRANIŞTE, Tudor, ZHUKOV, Sergey, DRAGOMAN, Mircea L., ALYABYEVA, L., CIOBANU, Vladimir, ALDRIGO, Martino, DRAGOMAN, Daniela, IORDANESCU, Sergiu A., SHREE, Sindu, RAEVSCHI, Simion, ADELUNG, Rainer, GORSHUNOV, Boris, TIGINYANU, Ion. Terahertz shielding properties of aero-GaN. In: Semiconductor Science and Technology. 2019, Vol. 34, nr. 12, p. 0. ISSN 0268-1242.0268-1242https://iopscience.iop.org/article/10.1088/1361-6641/ab4e58/pdfhttps://msuir.usm.md/handle/123456789/5107The electrodynamic properties of the first aero-material based on compound semiconductor namely of Aero-GaN, in the terahertz frequency region are experimentally investigated. Spectra of complex dielectric permittivity, refractive index, surface impedance are measured at frequencies 4–100 cm−1 and in the temperature interval 4–300 K. The shielding properties are found based on experimental data. The aero-material shows excellent shielding effectiveness in the frequency range from 0.1 to 1.3 THz, exceeding 40 dB in a huge frequency bandwidth, which is of high interest for industrial applications. These results place the aero-GaN among the best THz shielding materials known today.enaero-GaNcomplex dielectric permittivityTHz shieldingArticle